product benefits ? low losses ? low noise switching ? cooler operation ? higher reliability systems ? increased system power density product features ? ultrafast recovery times ? soft recovery characteristics ? popular sot-227 package ? low forward voltage ? high blocking voltage ? low leakage current ? avalanche energy rated product applications ? anti-parallel diode -switchmode power supply -inverters ? free wheeling diode -motor controllers -converters ? snubber diode ? uninterruptible power supply (ups) ? induction heating ? high speed recti?ers ultrafast soft recovery rectifier diode APT2X61DQ60J 600v 60a apt2x60dq60j 600v 60a 053-4207 rev e 7-2006 new diode data sheet by darel bidwell anti-paralle l p aralle l 2 1 3 2 3 4 1 4 apt2x60dq60j APT2X61DQ60J static electrical characteristics symbol v f i rm c t unit volts a pf min typ max 1.7 2.3 2.0 1.4 25 500 145 characteristic / test conditions forward voltage maximum reverse leakage current junction capacitance, v r = 200v i f = 60a i f = 120a i f = 60a, t j = 125c v r = 600v v r = 600v , t j = 125c dual die isotop ? package maximum ratings all ratings: t c = 25c unless otherwise speci?ed. characteristic / test conditions maximum d.c. reverse voltage maximum peak repetitive reverse voltage maximum working peak reverse voltage maximum average forward current (t c = 92c, duty cycle = 0.5) rms forward current (square wave, 50% duty) non-repetitive forward surge current (t j = 45c, 8.3ms) avalanche energy (1a, 40mh) operating and storagetemperature range symbol v r v rrm v rwm i f(av) i f(rms) i fsm e avl t j ,t stg unit volts amps mj c apt2x61_60dq60j 600 60 79 600 20 -55 to 175 microsemi website - http://www.microsemi.com s o t - 2 2 7 is ot op ? 1 2 3 4 file # e145592 "ul recognized"
apt2x61_60dq60j dynamic characteristics 053-4207 rev e 7-2006 new diode data sheet by darel bidwell z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1a. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0 0.5 single pulse 0.1 0.3 0.7 0.05 figure 1b, transient thermal impedance model peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : min typ max - 160 - 70 - 100 - 4 - - 140 - 690 - 9 - - 80 - 1540 - 31 unit ns nc amp s ns nc amp s ns nc amps characteristic reverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q r r i r rm t rr q r r i rrm t rr q r r i r rm test conditions i f = 60a, di f /dt = -200a/ s v r = 400v, t c = 25 c i f = 60a, di f /dt = -200a/ s v r = 400v, t c = 125 c i f = 60a, di f /dt = -1000a/ s v r = 400v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c thermal and mechanical characteristics characteristic / test conditions junction-to-case thermal resistance rms voltage (50-60hhz sinusoidal wavefomr ffrom terminals to mounting base for 1 min.) package weight maximum mounting torque symbol r jc v isolation w t torque min typ max .60 2500 1.03 29.2 10 1.1 unit c/w volts oz g lb?in n?m d = 0.9 microsemi reserves the right to change, without notice, the speci? cations and information contained herein. 0.159 0.255 0.186 0.0056 0.0849 0.489 dissipated powe r (watts ) t j (c ) t c (c) z ex t are the external therma l impedances: case to sink, sink to ambient, etc. set to zero when modeling onl y the case to junction. z ex t
053-4207 rev e 7-2006 apt2x61_60dq60j typical performance curves t j = 125 c v r = 400v 30a 60a 120a 160 140 120 100 80 60 40 20 0 60 50 40 30 20 10 0 duty cycle = 0.5 t j = 175 c 100 80 60 40 20 0 1.2 1.0 0.8 0.6 0.4 0.2 0.0 600 500 400 300 200 100 0 c j , junction capacitance k f , dynamic paramete rs (pf) (normalized to 1000a/ s) i f(av) (a) t j , junction temperature ( c) case temperature ( c) figure 6. dynamic parameters vs. junction temperature figure 7. maximum average forward current vs. casetemperature v r , reverse voltage (v) figure 8. junction capacitance vs. reverse voltage 200 180 160 140 120 100 80 60 40 20 0 2500 2000 1500 1000 500 0 v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 2. forward current vs. forward voltage figure 3. reverse recovery time vs. current rate of change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 4. reverse recovery charge vs. current rate of change figure 5. reverse recovery current vs. current rate of change q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = 175 c t j = -55 c t j = 25 c t j = 125 c t j = 125 c v r = 400v 60a 30a 120a 0 0.5 1.0 1.5 2.0 2.5 0 200 400 600 800 1000 1200 1400 1600 0 200 400 600 800 1000 1200 1400 1600 0 200 400 600 800 1000 1200 1400 1600 t j = 125 c v r = 400v 120a 60a 30a t rr q rr q rr t rr i rrm 0 25 50 75 100 125 150 25 50 75 100 125 150 175 1 10 100 200
apt2x61_60dq60j 053-4207 rev e 7-2006 apt60m75l2ll 4 3 1 2 5 5 zer o 1 2 3 4 di f /d t - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current . t rr - revers e r ecovery time, measured from zero crossing wher e diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero . figure 9. diode test circui t figure 10, diode reverse recovery waveform and definition s 0.25 i rrm pearson 2878 current transformer di f /d t adjus t 30 h d.u.t. +18v 0v v r t rr / q rr wavefor m anode 1 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 h100 (4 places ) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) anode 2 anti-paralle l p aralle l cathode 1 r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) cathode 2 anode 1 cathode 2 anode 2 cathode 1 sot-227 (isotop ? ) package outline apt2x60dq60j APT2X61DQ60J isotop ? is a registered trademark of st microelectronics nv. microsemi's products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved.
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